Mechanism of Thin Layers Graphite Formation by 13C Implantation and Annealing
The mechanism of thin layers graphite (TLG) synthesis on a polycrystalline nickel film deposited on SiO2 (300 nm thick)/Si(100) has been investigated by 13C implantation of four equivalent graphene monolayers and annealing at moderate temperatures (450–600 °C). During this process, the implanted 13C...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2014-04-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2076-3417/4/2/180 |