Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry
A third-generation PRESiCE™ technology has been qualified for manufacturing SiC power devices in a commercial foundry using 6 inch wafers. JBS diodes, power MOSFETs, and JBSFETs with 1.2 kV ratings were fabricated using this technology with good yields. Conventional device structures simi...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9159545/ |