A Novel Current-Source-Based Gate Driver With Active Voltage Balancing Control for Series-Connected GaN HEMTs

A Novel Current-Source-Based Gate Driver With Active Voltage Balancing Control for Series-Connected GaN HEMTs

The voltage rating of the commercial Gallium Nitride (GaN) power devices are limited to 600/650 V due to the lateral structure. Stacking the low-voltage rating devices is a straightforward approach to block higher dc link voltage. However, the unbalanced voltage sharing can occur due to the discrepa...

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Bibliographic Details
Main Authors: Zhengda Zhang, Chunhui Liu, Mengzhi Wang, Yunpeng Si, Yifu Liu, Qin Lei
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Gallium nitride
HEMTs
stacking
current control
driver circuits
parasitic capacitance
Online Access:https://ieeexplore.ieee.org/document/9393550/

Internet

https://ieeexplore.ieee.org/document/9393550/

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