Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material pa...

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Bibliographic Details
Main Authors: Shaofei Zhang, David Arto Laleyan, Qi Wang, Zetian Mi
Format: Article
Language:English
Published: Wiley 2015-10-01
Series:The Journal of Engineering
Subjects:
nanowires
gallium compounds
indium compounds
III-V semiconductors
wide band gap semiconductors
light emitting diodes
epitaxial growth
GaN-InGaN
design
hole transport
axial nanowire light-emitting diodes
carrier transport
nanowire geometry
Online Access:http://digital-library.theiet.org/content/journals/10.1049/joe.2014.0349

Internet

http://digital-library.theiet.org/content/journals/10.1049/joe.2014.0349

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