Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology
Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, diffe...
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Online Access: | https://www.mdpi.com/2072-666X/12/2/136 |
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doaj-258ad76ea06b4d5d9d425151614a97312021-01-28T00:05:36ZengMDPI AGMicromachines2072-666X2021-01-011213613610.3390/mi12020136Research on Sapphire Deep Cavity Corrosion and Mask Selection TechnologyYiingqi Shang0Hongquan Zhang1Yan Zhang2Electronic Science and Technology, College of Electronic Engineering, Heilongjiang University, Harbin 150001, ChinaElectronic Science and Technology, College of Electronic Engineering, Heilongjiang University, Harbin 150001, ChinaThe 49th Research Institute, China Electronics Technology Group Corporation, Harbin 150001, ChinaAimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.https://www.mdpi.com/2072-666X/12/2/136wet etchingsapphiremask layer |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yiingqi Shang Hongquan Zhang Yan Zhang |
spellingShingle |
Yiingqi Shang Hongquan Zhang Yan Zhang Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology Micromachines wet etching sapphire mask layer |
author_facet |
Yiingqi Shang Hongquan Zhang Yan Zhang |
author_sort |
Yiingqi Shang |
title |
Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology |
title_short |
Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology |
title_full |
Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology |
title_fullStr |
Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology |
title_full_unstemmed |
Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology |
title_sort |
research on sapphire deep cavity corrosion and mask selection technology |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2021-01-01 |
description |
Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion. |
topic |
wet etching sapphire mask layer |
url |
https://www.mdpi.com/2072-666X/12/2/136 |
work_keys_str_mv |
AT yiingqishang researchonsapphiredeepcavitycorrosionandmaskselectiontechnology AT hongquanzhang researchonsapphiredeepcavitycorrosionandmaskselectiontechnology AT yanzhang researchonsapphiredeepcavitycorrosionandmaskselectiontechnology |
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1724320186751778816 |