Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

The effect of V-pits in the upper waveguide (UWG) on device performance of GaN-based laser diodes (LDs) has been studied. Experimental results demonstrate that in comparison with the LDs with u-In0.017Ga0.983N/u-GaN multiple UWG or u-In0.017Ga0.983N one, the LDs with a single u-GaN UWG has the best...

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Bibliographic Details
Main Authors: Liang Feng, Zhao Degang, Jiang Desheng, Wang Wenjie, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Zhang Liqun
Format: Article
Language:English
Published: De Gruyter 2020-02-01
Series:Nanophotonics
Subjects:
gan-based laser diode
v-pits
upper waveguide layer
(140.5960) semiconductor lasers
(230.7370) waveguides
Online Access:https://doi.org/10.1515/nanoph-2019-0449

Internet

https://doi.org/10.1515/nanoph-2019-0449

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