Atomic insight into concurrent He, D, and T sputtering and near-surface implantation of 3C-SiC crystallographic surfaces
We present results from atomistic simulations of sputtering and near-surface implantation of concurrent He, D, and T bombardment of cubic silicon carbide (3C-SiC). This is achieved by first establishing a many-body interatomic potential parameter set to treat interactions of He and hydrogenic specie...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-05-01
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| Series: | Nuclear Materials and Energy |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352179118301303 |