Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were f...

Full description

Bibliographic Details
Main Authors: Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap, Sergey Rumyantsev
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Materials
Subjects:
graphene
AlGaN/GaN
Schottky diode
field-effect transistor
finFET
noise
Online Access:https://www.mdpi.com/1996-1944/13/18/4140

Internet

https://www.mdpi.com/1996-1944/13/18/4140

Similar Items