Palladium-oxide extended gate field effect transistor as pH sensor
In this paper, palladium thin films were deposited on the Si/SiO2/Pt substrate by using the electron beam evaporation technique, and then the films were annealed at 500 °C for one hour in an oxygen ambient to form the palladium oxide (PdO) film. The films have been tested for hydrogen ion (pH) sensi...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-12-01
|
| Series: | Materials Letters: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590150821000430 |