Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit. Recent years have seen a surge of experimental demonstrations of such devices built upon two-dimensional materials based metal–ins...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2021-03-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-021-00209-0 |