Sodium diffusion in 4H-SiC
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the othe...
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| Format: | Article |
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AIP Publishing LLC
2014-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4895040 |
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doaj-23d19d38486b46ceb03fdca7e27443632020-11-24T21:10:39ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129096106096106-710.1063/1.4895040011409APMSodium diffusion in 4H-SiCM. K. Linnarsson0A. Hallén1Integrated Devices and Circuits, KTH Royal Institute of Technology, Electrum 229, SE-164 40 Kista, SwedenIntegrated Devices and Circuits, KTH Royal Institute of Technology, Electrum 229, SE-164 40 Kista, SwedenSodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 °C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC.http://dx.doi.org/10.1063/1.4895040 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
M. K. Linnarsson A. Hallén |
| spellingShingle |
M. K. Linnarsson A. Hallén Sodium diffusion in 4H-SiC APL Materials |
| author_facet |
M. K. Linnarsson A. Hallén |
| author_sort |
M. K. Linnarsson |
| title |
Sodium diffusion in 4H-SiC |
| title_short |
Sodium diffusion in 4H-SiC |
| title_full |
Sodium diffusion in 4H-SiC |
| title_fullStr |
Sodium diffusion in 4H-SiC |
| title_full_unstemmed |
Sodium diffusion in 4H-SiC |
| title_sort |
sodium diffusion in 4h-sic |
| publisher |
AIP Publishing LLC |
| series |
APL Materials |
| issn |
2166-532X |
| publishDate |
2014-09-01 |
| description |
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 °C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC. |
| url |
http://dx.doi.org/10.1063/1.4895040 |
| work_keys_str_mv |
AT mklinnarsson sodiumdiffusionin4hsic AT ahallen sodiumdiffusionin4hsic |
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