Sodium diffusion in 4H-SiC
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the othe...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4895040 |