Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods
<p>Abstract</p> <p>Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron microscope, are used to study the deterioration of interfa...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/194 |