Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors
High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL) variation in time as a result of increasing tempera...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2017-06-01
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| Series: | Metrology and Measurement Systems |
| Subjects: | |
| Online Access: | http://www.degruyter.com/view/j/mms.2017.24.issue-2/mms-2017-0034/mms-2017-0034.xml?format=INT |