Understanding the <inline-formula> <tex-math notation="LaTeX">$C-V$ </tex-math></inline-formula> Characteristics of InAsSb-Based nBn Infrared Detectors With N- and P-Type Barrier Layers Through Numerical Modeling
Capacitance-voltage (C-V) profiling is a useful technique for accurate and non-destructive determination of carrier concentrations in semiconductor materials. Recently, this measurement has been applied to the infrared barrier detector to determine the doping densities of the absorber and contact la...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8698299/ |