Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films

Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films

Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is poss...

Full description

Bibliographic Details
Main Authors: Venger E. F., Lytvyn P. M., Matveeva L. A., Mitin V. F., Kholevchuk V. V.
Format: Article
Language:English
Published: Politehperiodika 2014-08-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Ge films
growth rate
surface morphology
electronic and optical properties
intrinsic mechanical stresses
Online Access:http://www.tkea.com.ua/tkea/2014/4_2014/pdf/07.pdf
id doaj-21eb4310bb3e46388a2b0850b758b724
record_format Article
spelling doaj-21eb4310bb3e46388a2b0850b758b7242020-11-24T21:25:14ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182014-08-014394410.15222/TKEA2014.4.39Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous filmsVenger E. F.0Lytvyn P. M.1Matveeva L. A.2Mitin V. F.3Kholevchuk V. V.4Ukraine, Kyiv, V. Lashkaryov Institute of Semiconductor Physics of NASUUkraine, Kyiv, V. Lashkaryov Institute of Semiconductor Physics of NASUUkraine, Kyiv, V. Lashkaryov Institute of Semiconductor Physics of NASUUkraine, Kyiv, V. Lashkaryov Institute of Semiconductor Physics of NASUUkraine, Kyiv, V. Lashkaryov Institute of Semiconductor Physics of NASUGe thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is possible to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, as well as high temperature sensitivity that can be used for IR and electronics technologies. http://www.tkea.com.ua/tkea/2014/4_2014/pdf/07.pdfGe filmsgrowth ratesurface morphologyelectronic and optical propertiesintrinsic mechanical stresses
collection DOAJ
language English
format Article
sources DOAJ
author Venger E. F.
Lytvyn P. M.
Matveeva L. A.
Mitin V. F.
Kholevchuk V. V.
spellingShingle Venger E. F.
Lytvyn P. M.
Matveeva L. A.
Mitin V. F.
Kholevchuk V. V.
Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Ge films
growth rate
surface morphology
electronic and optical properties
intrinsic mechanical stresses
author_facet Venger E. F.
Lytvyn P. M.
Matveeva L. A.
Mitin V. F.
Kholevchuk V. V.
author_sort Venger E. F.
title Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
title_short Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
title_full Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
title_fullStr Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
title_full_unstemmed Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
title_sort fabrication, properties and application of ge-on-gaas thin nanoheterogeneous films
publisher Politehperiodika
series Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
issn 2225-5818
publishDate 2014-08-01
description Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found that it is possible to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, as well as high temperature sensitivity that can be used for IR and electronics technologies.
topic Ge films
growth rate
surface morphology
electronic and optical properties
intrinsic mechanical stresses
url http://www.tkea.com.ua/tkea/2014/4_2014/pdf/07.pdf
work_keys_str_mv AT vengeref fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms
AT lytvynpm fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms
AT matveevala fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms
AT mitinvf fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms
AT kholevchukvv fabricationpropertiesandapplicationofgeongaasthinnanoheterogeneousfilms
_version_ 1725983974904299520

Similar Items