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Venger E. F.
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Venger E. F.
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Venger E. F.
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1
Multi-ion scattering of charged carriers by ionized impurities in heavily doped semiconductors: From bulk to nanowires
by
Kovalenko, K.L
,
Kozlovskiy, S.I
,
Sharan, N.N
,
Venger
,
E.F
Published 2022
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Article
2
Fabrication, properties and application of Ge-on-GaAs thin nanoheterogeneous films
by
Venger
E
.
F
.
,
Lytvyn P. M.
,
Matveeva L. A.
,
Mitin V. F.
,
Kholevchuk V. V.
Published 2014-08-01
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Article
3
Cryogenic resistance thermometers based on Ge-InP films
by
Mitin V. F.
,
Kholevchuk V. V.
,
Soloviev E. A.
,
Sidnev A. B.
,
Venger
E
.
F
.
Published 2020-12-01
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Article
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Related Subjects
Analytical expressions
Carrier concentration
Carrier mobility
Charged carriers
Doped semiconductors
Effective mass
Electrons
Gallium arsenide
Heavily doped
III-V semiconductors
Impurities in
Indium phosphide
Ion scattering
Ionization
Ionized impurities
Ions
Low field mobility
Nanowires
Semiconducting indium phosphide
Semiconductor alloys
Semiconductor doping
Semiconductor structure
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