Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

The hole injection efficiency is one of the bottlenecks that restrict the external quantum efficiency (EQE) and optical power of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The polarization-induced positive sheet charges at the last quantum barrier (LQB)/electron blocki...

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Main Authors: Mengran Liu, Yongchen Ji, Hang Zhou, Changsheng Xia, Zihui Zhang, Chao Liu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
DUV LED
hole injection efficiency
polarization-induced sheet charges
Online Access:https://ieeexplore.ieee.org/document/9506897/
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spelling doaj-21a9e27389f44b3e82f22d886c94e6f62021-09-09T23:00:05ZengIEEEIEEE Photonics Journal1943-06552021-01-011341810.1109/JPHOT.2021.31014809506897Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting DiodesMengran Liu0https://orcid.org/0000-0002-6466-9112Yongchen Ji1Hang Zhou2Changsheng Xia3Zihui Zhang4Chao Liu5https://orcid.org/0000-0001-6368-3986School of Microelectronics, Institute of Novel Semiconductors, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaSchool of Microelectronics, Institute of Novel Semiconductors, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaSchool of Microelectronics, Institute of Novel Semiconductors, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaSinopeda Technology Company Ltd., Shanghai, ChinaState Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Hongqiao District, Tianjin, ChinaSchool of Microelectronics, Institute of Novel Semiconductors, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, ChinaThe hole injection efficiency is one of the bottlenecks that restrict the external quantum efficiency (EQE) and optical power of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The polarization-induced positive sheet charges at the last quantum barrier (LQB)&#x002F;electron blocking layer (EBL) interface reflect the holes back to the p-type layer and weaken the hole injection capability into the active region. In this work, we designed and incorporated a polarization-engineered Al<sub>x</sub>Ga<sub>1-x</sub>N&#x002F;Al<sub>y</sub>Ga<sub>1-y</sub>N superlattice layer at the LQB&#x002F;EBL interface. The positive sheet charges at the LQB&#x002F;EBL interface can be inverted into negative charges with optimal Al compositions in the Al<sub>x</sub>Ga<sub>1-x</sub>N&#x002F;Al<sub>y</sub>Ga<sub>1-y</sub>N superlattice layer. The electron confinement and hole injection efficiency can also be improved through increasing the effective barrier height for electrons and decreasing the effective barrier height for holes, resulting in an enhanced optical power by 29.4&#x0025; and alleviated efficiency droop by 78.4&#x0025; for the proposed device with an Al<sub>0.67</sub>Ga<sub>0.33</sub>N&#x002F;Al<sub>0.7</sub>Ga<sub>0.3</sub>N superlattice insertion layer. The sheet charge engineering method by polarization provides an alternative approach to boost the hole injection efficiency towards an enhanced device performance for DUV LEDs.https://ieeexplore.ieee.org/document/9506897/DUV LEDhole injection efficiencypolarization-induced sheet charges
collection DOAJ
language English
format Article
sources DOAJ
author Mengran Liu
Yongchen Ji
Hang Zhou
Changsheng Xia
Zihui Zhang
Chao Liu
spellingShingle Mengran Liu
Yongchen Ji
Hang Zhou
Changsheng Xia
Zihui Zhang
Chao Liu
Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
IEEE Photonics Journal
DUV LED
hole injection efficiency
polarization-induced sheet charges
author_facet Mengran Liu
Yongchen Ji
Hang Zhou
Changsheng Xia
Zihui Zhang
Chao Liu
author_sort Mengran Liu
title Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
title_short Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
title_full Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
title_fullStr Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
title_full_unstemmed Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
title_sort sheet charge engineering towards an efficient hole injection in 290 nm deep ultraviolet light-emitting diodes
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2021-01-01
description The hole injection efficiency is one of the bottlenecks that restrict the external quantum efficiency (EQE) and optical power of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The polarization-induced positive sheet charges at the last quantum barrier (LQB)&#x002F;electron blocking layer (EBL) interface reflect the holes back to the p-type layer and weaken the hole injection capability into the active region. In this work, we designed and incorporated a polarization-engineered Al<sub>x</sub>Ga<sub>1-x</sub>N&#x002F;Al<sub>y</sub>Ga<sub>1-y</sub>N superlattice layer at the LQB&#x002F;EBL interface. The positive sheet charges at the LQB&#x002F;EBL interface can be inverted into negative charges with optimal Al compositions in the Al<sub>x</sub>Ga<sub>1-x</sub>N&#x002F;Al<sub>y</sub>Ga<sub>1-y</sub>N superlattice layer. The electron confinement and hole injection efficiency can also be improved through increasing the effective barrier height for electrons and decreasing the effective barrier height for holes, resulting in an enhanced optical power by 29.4&#x0025; and alleviated efficiency droop by 78.4&#x0025; for the proposed device with an Al<sub>0.67</sub>Ga<sub>0.33</sub>N&#x002F;Al<sub>0.7</sub>Ga<sub>0.3</sub>N superlattice insertion layer. The sheet charge engineering method by polarization provides an alternative approach to boost the hole injection efficiency towards an enhanced device performance for DUV LEDs.
topic DUV LED
hole injection efficiency
polarization-induced sheet charges
url https://ieeexplore.ieee.org/document/9506897/
work_keys_str_mv AT mengranliu sheetchargeengineeringtowardsanefficientholeinjectionin290nmdeepultravioletlightemittingdiodes
AT yongchenji sheetchargeengineeringtowardsanefficientholeinjectionin290nmdeepultravioletlightemittingdiodes
AT hangzhou sheetchargeengineeringtowardsanefficientholeinjectionin290nmdeepultravioletlightemittingdiodes
AT changshengxia sheetchargeengineeringtowardsanefficientholeinjectionin290nmdeepultravioletlightemittingdiodes
AT zihuizhang sheetchargeengineeringtowardsanefficientholeinjectionin290nmdeepultravioletlightemittingdiodes
AT chaoliu sheetchargeengineeringtowardsanefficientholeinjectionin290nmdeepultravioletlightemittingdiodes
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