Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

The hole injection efficiency is one of the bottlenecks that restrict the external quantum efficiency (EQE) and optical power of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The polarization-induced positive sheet charges at the last quantum barrier (LQB)/electron blocki...

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Bibliographic Details
Main Authors: Mengran Liu, Yongchen Ji, Hang Zhou, Changsheng Xia, Zihui Zhang, Chao Liu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9506897/