Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes
The hole injection efficiency is one of the bottlenecks that restrict the external quantum efficiency (EQE) and optical power of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The polarization-induced positive sheet charges at the last quantum barrier (LQB)/electron blocki...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9506897/ |