New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure
The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qua...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-07-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/7/1089 |