Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications
Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE). A bilayer metal configuration (Metal 1 / Metal 2) was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mec...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4943217 |