AlN film deposition as a semiconductor device
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universidad Nacional de Colombia
2013-05-01
|
| Series: | Ingeniería e Investigación |
| Subjects: | |
| Online Access: | https://revistas.unal.edu.co/index.php/ingeinv/article/view/39505 |