Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis

• Main Authors: Volcheck Vladislav, Stempitsky Viktor
• Format: Article
• Language: English
• Published: EDP Sciences 2019-01-01
• Series: ITM Web of Conferences
• Online Access: https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08005.pdf

At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon. An analytical model describing the two-dimensional electron gas mobility controlled by these scattering processes as a function of the electron concentration and the temperature was developed and integrated into a device simulator package using a built-in C language interpreter. The electrical characteristics of a simple AlGaAs/GaAs high electron mobility transistor were simulated using either the derived or a conventional bulk mobility model and the results were compared.