Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis

At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon. An analytical model describing the two-dimensiona...

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Bibliographic Details
Main Authors: Volcheck Vladislav, Stempitsky Viktor
Format: Article
Language:English
Published: EDP Sciences 2019-01-01
Series:ITM Web of Conferences
Online Access:https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_08005.pdf