Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Abstract Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C....

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Bibliographic Details
Main Authors: Hongyan Xu, Feng Han, Chengkai Xia, Siyan Wang, Ranish M. Ramachandran, Christophe Detavernier, Minsong Wei, Liwei Lin, Serge Zhuiykov
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
TiO2-Ga2O3
n-p heterostructures
atomic layer deposition
2D semiconductors
Online Access:http://link.springer.com/article/10.1186/s11671-019-2991-1

Internet

http://link.springer.com/article/10.1186/s11671-019-2991-1

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