In-Line Tunnel Field Effect Transistor: Drive Current Improvement

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing, and the intrinsic time delay, etc...

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Bibliographic Details
Main Authors: Woojin Park, Amir N. Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
TFET
in-line tunneling
silicon
vertical structure
tunneling distance
tunneling probability
Online Access:https://ieeexplore.ieee.org/document/8372468/

Internet

https://ieeexplore.ieee.org/document/8372468/

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