Terahertz light-emitting graphene-channel transistor toward single-mode lasing

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emiss...

Full description

Bibliographic Details
Main Authors: Yadav Deepika, Tamamushi Gen, Watanabe Takayuki, Mitsushio Junki, Tobah Youssef, Sugawara Kenta, Dubinov Alexander A., Satou Akira, Ryzhii Maxim, Ryzhii Victor, Otsuji Taiichi
Format: Article
Language:English
Published: De Gruyter 2018-03-01
Series:Nanophotonics
Subjects:
graphene
lasers
far infrared or terahertz
pumping
current injection
distributed-feedback
optoelectronics
Online Access:https://doi.org/10.1515/nanoph-2017-0106

Internet

https://doi.org/10.1515/nanoph-2017-0106

Similar Items