Improved dual sided doped memristor: modelling and applications
Memristor as a novel and emerging electronic device having vast range of applications suffer from poor frequency response and saturation length. In this paper, the authors present a novel and an innovative device structure for the memristor with two active layers and its non-linear ionic drift model...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-05-01
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| Series: | The Journal of Engineering |
| Subjects: | |
| Online Access: | http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0265 |