Improved dual sided doped memristor: modelling and applications

Improved dual sided doped memristor: modelling and applications

Memristor as a novel and emerging electronic device having vast range of applications suffer from poor frequency response and saturation length. In this paper, the authors present a novel and an innovative device structure for the memristor with two active layers and its non-linear ionic drift model...

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Bibliographic Details
Main Authors: Anup Shrivastava, Muhammad Khalid, Komal Singh, Jawar Singh
Format: Article
Language:English
Published: Wiley 2014-05-01
Series:The Journal of Engineering
Subjects:
memristors
frequency response
semiconductor device models
logic gates
dual sided doped memristor
electronic device
saturation length
device structure
active layers
nonlinear ionic drift model
I–V characteristics
circuit level simulation
SPICE model
hybrid complementary metal oxide semiconductor memristive logic
memristor ratioed logic
noise margin
delay time
dynamic hazards
single active layer memristors
Online Access:http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0265

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http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0265

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