Influence of Pt Gate Electrode Thickness on the Hydrogen Gas Sensing Characteristics of Pt/In2O3/SiC Hetero-Junction Devices

Hetero-junction Pt/In2O3/SiC devices with different Pt thickness (30, 50 and 90nm) were fabricated and their hydrogen gas sensing characteristics have been studied. Pt and In2O3 thin films were deposited by laser ablation. The hydrogen sensitivity was found to increase with decreasing Pt electrode t...

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Bibliographic Details
Main Authors: S. Kandasamy, W. Gao, A. Holland, W. Wlodarski, T. Katsube
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2007-09-01
Series:Sensors & Transducers
Subjects:
Pt
SiC
Online Access:http://www.sensorsportal.com/HTML/DIGEST/september_07/P_187.pdf