Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime
This paper describes the performance prospect of scaled cross-current tetrode (XCT) CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders hig...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2014-01-01
|
| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9268/4/1/15 |