State of the Art and Future Perspectives in Advanced CMOS Technology
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-08-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/10/8/1555 |
| id |
doaj-1e19463b7889450dac09ad0268d34ded |
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| record_format |
Article |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Henry H. Radamson Huilong Zhu Zhenhua Wu Xiaobin He Hongxiao Lin Jinbiao Liu Jinjuan Xiang Zhenzhen Kong Wenjuan Xiong Junjie Li Hushan Cui Jianfeng Gao Hong Yang Yong Du Buqing Xu Ben Li Xuewei Zhao Jiahan Yu Yan Dong Guilei Wang |
| spellingShingle |
Henry H. Radamson Huilong Zhu Zhenhua Wu Xiaobin He Hongxiao Lin Jinbiao Liu Jinjuan Xiang Zhenzhen Kong Wenjuan Xiong Junjie Li Hushan Cui Jianfeng Gao Hong Yang Yong Du Buqing Xu Ben Li Xuewei Zhao Jiahan Yu Yan Dong Guilei Wang State of the Art and Future Perspectives in Advanced CMOS Technology Nanomaterials CMOS process integration nano-scale transistors epitaxy |
| author_facet |
Henry H. Radamson Huilong Zhu Zhenhua Wu Xiaobin He Hongxiao Lin Jinbiao Liu Jinjuan Xiang Zhenzhen Kong Wenjuan Xiong Junjie Li Hushan Cui Jianfeng Gao Hong Yang Yong Du Buqing Xu Ben Li Xuewei Zhao Jiahan Yu Yan Dong Guilei Wang |
| author_sort |
Henry H. Radamson |
| title |
State of the Art and Future Perspectives in Advanced CMOS Technology |
| title_short |
State of the Art and Future Perspectives in Advanced CMOS Technology |
| title_full |
State of the Art and Future Perspectives in Advanced CMOS Technology |
| title_fullStr |
State of the Art and Future Perspectives in Advanced CMOS Technology |
| title_full_unstemmed |
State of the Art and Future Perspectives in Advanced CMOS Technology |
| title_sort |
state of the art and future perspectives in advanced cmos technology |
| publisher |
MDPI AG |
| series |
Nanomaterials |
| issn |
2079-4991 |
| publishDate |
2020-08-01 |
| description |
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future. |
| topic |
CMOS process integration nano-scale transistors epitaxy |
| url |
https://www.mdpi.com/2079-4991/10/8/1555 |
| work_keys_str_mv |
AT henryhradamson stateoftheartandfutureperspectivesinadvancedcmostechnology AT huilongzhu stateoftheartandfutureperspectivesinadvancedcmostechnology AT zhenhuawu stateoftheartandfutureperspectivesinadvancedcmostechnology AT xiaobinhe stateoftheartandfutureperspectivesinadvancedcmostechnology AT hongxiaolin stateoftheartandfutureperspectivesinadvancedcmostechnology AT jinbiaoliu stateoftheartandfutureperspectivesinadvancedcmostechnology AT jinjuanxiang stateoftheartandfutureperspectivesinadvancedcmostechnology AT zhenzhenkong stateoftheartandfutureperspectivesinadvancedcmostechnology AT wenjuanxiong stateoftheartandfutureperspectivesinadvancedcmostechnology AT junjieli stateoftheartandfutureperspectivesinadvancedcmostechnology AT hushancui stateoftheartandfutureperspectivesinadvancedcmostechnology AT jianfenggao stateoftheartandfutureperspectivesinadvancedcmostechnology AT hongyang stateoftheartandfutureperspectivesinadvancedcmostechnology AT yongdu stateoftheartandfutureperspectivesinadvancedcmostechnology AT buqingxu stateoftheartandfutureperspectivesinadvancedcmostechnology AT benli stateoftheartandfutureperspectivesinadvancedcmostechnology AT xueweizhao stateoftheartandfutureperspectivesinadvancedcmostechnology AT jiahanyu stateoftheartandfutureperspectivesinadvancedcmostechnology AT yandong stateoftheartandfutureperspectivesinadvancedcmostechnology AT guileiwang stateoftheartandfutureperspectivesinadvancedcmostechnology |
| _version_ |
1724637311958777856 |
| spelling |
doaj-1e19463b7889450dac09ad0268d34ded2020-11-25T03:15:49ZengMDPI AGNanomaterials2079-49912020-08-01101555155510.3390/nano10081555State of the Art and Future Perspectives in Advanced CMOS TechnologyHenry H. Radamson0Huilong Zhu1Zhenhua Wu2Xiaobin He3Hongxiao Lin4Jinbiao Liu5Jinjuan Xiang6Zhenzhen Kong7Wenjuan Xiong8Junjie Li9Hushan Cui10Jianfeng Gao11Hong Yang12Yong Du13Buqing Xu14Ben Li15Xuewei Zhao16Jiahan Yu17Yan Dong18Guilei Wang19Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaJiangsu Leuven Instruments, Xuzhou 221300, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThe international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.https://www.mdpi.com/2079-4991/10/8/1555CMOSprocess integrationnano-scale transistorsepitaxy |