InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs

InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs

While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche multiplication layer to form an avalanche p...

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Bibliographic Details
Main Authors: M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi, M. Chtioui, D. Carpentier
Format: Article
Language:English
Published: IEEE 2010-01-01
Series:IEEE Photonics Journal
Subjects:
Photodiodes
InGaAs
avalanche photodiodes
APDs
SAM
microwave photonics
Online Access:https://ieeexplore.ieee.org/document/5462932/

Internet

https://ieeexplore.ieee.org/document/5462932/

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