Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation

Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation

Abstract GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were invest...

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Bibliographic Details
Main Author: Han-Youl Ryu
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
Characteristic temperature
GaN
Quantum well
Laser diode
Carrier transport
Online Access:http://link.springer.com/article/10.1186/s11671-017-2141-6

Internet

http://link.springer.com/article/10.1186/s11671-017-2141-6

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