Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers
Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B<sub>4</sub>C (0.3 nm)/Si (3.7 nm) was quantified by employing...
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MDPI AG
2021-05-01
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| Series: | Coatings |
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| Online Access: | https://www.mdpi.com/2079-6412/11/6/612 |
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doaj-1b19b31e14a34d0b862a69bcd9fb36172021-06-01T00:41:11ZengMDPI AGCoatings2079-64122021-05-011161261210.3390/coatings11060612Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-MultilayersHao Yang0Songyou Lian1Patrick Chapon2Yibing Song3Jiangyong Wang4Congkang Xu5Department of Chemistry, Shantou University, 243 Daxue Road, Shantou 515063, ChinaDepartment of Physics, Shantou University, 243 Daxue Road, Shantou 515063, ChinaHORIBA France, Bd Thomas Gobert, 91120 Palaiseau, FranceDepartment of Chemistry, Shantou University, 243 Daxue Road, Shantou 515063, ChinaDepartment of Physics, Shantou University, 243 Daxue Road, Shantou 515063, ChinaDepartment of Physics, Shantou University, 243 Daxue Road, Shantou 515063, ChinaPulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B<sub>4</sub>C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.https://www.mdpi.com/2079-6412/11/6/612GDOES depth profilingpreferential sputteringMRI modelnano-multilayers |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Hao Yang Songyou Lian Patrick Chapon Yibing Song Jiangyong Wang Congkang Xu |
| spellingShingle |
Hao Yang Songyou Lian Patrick Chapon Yibing Song Jiangyong Wang Congkang Xu Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers Coatings GDOES depth profiling preferential sputtering MRI model nano-multilayers |
| author_facet |
Hao Yang Songyou Lian Patrick Chapon Yibing Song Jiangyong Wang Congkang Xu |
| author_sort |
Hao Yang |
| title |
Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers |
| title_short |
Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers |
| title_full |
Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers |
| title_fullStr |
Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers |
| title_full_unstemmed |
Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B<sub>4</sub>C/Si Nano-Multilayers |
| title_sort |
quantification of high resolution pulsed rf gdoes depth profiles for mo/b<sub>4</sub>c/si nano-multilayers |
| publisher |
MDPI AG |
| series |
Coatings |
| issn |
2079-6412 |
| publishDate |
2021-05-01 |
| description |
Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B<sub>4</sub>C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling. |
| topic |
GDOES depth profiling preferential sputtering MRI model nano-multilayers |
| url |
https://www.mdpi.com/2079-6412/11/6/612 |
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