Substrate and Mg doping effects in GaAs nanowires

Substrate and Mg doping effects in GaAs nanowires

Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grow...

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Bibliographic Details
Main Authors: Perumal Kannappan, Nabiha Ben Sedrine, Jennifer P. Teixeira, Maria R. Soares, Bruno P. Falcão, Maria R. Correia, Nestor Cifuentes, Emilson R. Viana, Marcus V. B. Moreira, Geraldo M. Ribeiro, Alfredo G. de Oliveira, Juan C. González, Joaquim P. Leitão
Format: Article
Language:English
Published: Beilstein-Institut 2017-10-01
Series:Beilstein Journal of Nanotechnology
Subjects:
electronic structure
field effect transistors
GaAs nanowires
photoluminescence
Online Access:https://doi.org/10.3762/bjnano.8.212

Internet

https://doi.org/10.3762/bjnano.8.212

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