Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displaceme...

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Bibliographic Details
Main Authors: M. Heini, A. Aierken, Z. H. Li, X. F. Zhao, M. Sailai, X. B. Shen, Y. Xu, H. T. Liu, Y. D. Li, Q. Guo, C. M. Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2018-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5049367

Internet

http://dx.doi.org/10.1063/1.5049367

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