Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporat...

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Bibliographic Details
Main Authors: Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Yacine Halfaya, Simon Gautier, Paul L. Voss, Ali Ahaitouf, Jean Paul Salvestrini, Abdallah Ougazzaden
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Nanomaterials
Subjects:
h-BN
magnesium
doping
wide bandgap
heterojunction
Online Access:https://www.mdpi.com/2079-4991/11/1/211

Internet

https://www.mdpi.com/2079-4991/11/1/211

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