Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport

Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport

Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost...

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Bibliographic Details
Main Authors: Wei Gu, Xiangkai Liu, Xiaodong Pi, Xingliang Dai, Shuangyi Zhao, Li Yao, Dongsheng Li, Yizheng Jin, Mingsheng Xu, Deren Yang, Guogang Qin
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Silicon quantum dots (Si QDs)
light-emitting diodes (LEDs)
interlayer
hole transport
Online Access:https://ieeexplore.ieee.org/document/7858634/

Internet

https://ieeexplore.ieee.org/document/7858634/

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