Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures

Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures

Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The device with 200 oC grown Al2O3 dielectric shows high...

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Bibliographic Details
Main Authors: Zeyang Ren, Guansheng Yuan, Jinfeng Zhang, Lei Xu, Jincheng Zhang, Wanjiao Chen, Yue Hao
Format: Article
Language:English
Published: AIP Publishing LLC 2018-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5037925

Internet

http://dx.doi.org/10.1063/1.5037925

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