Imperfect two-dimensional topological insulator field-effect transistors
A challenge of using 2D materials for nanoelectronic devices is the need for defect-free lattice supporting efficient carrier transport. Here, the authors show theoretically that 2D topological insulators enable high-performance, low-power field-effect transistors without requiring defect-free mater...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2017-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms14184 |