Study on the effect of re-deposition induced by ion beam etching on MTJ performances
Magnetic tunnel junction (MTJ) as a key spintronics device can be used for the high-sensitivity magnetic field sensor and high-density non-volatile magnetic random access memory (MRAM). To obtain a high tunneling magnetoresistance (TMR), precise control of the etching process for MTJs is an essentia...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5117312 |