Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Bibliographic Details
Main Authors: Zhang Limin, Zhang Xiaodong, You Wei, Yang Zhen, Wang WenXiu, Ge Qing, Liu Zhengmin
Format: Article
Language:English
Published: De Gruyter 2008-06-01
Series:Open Physics
Subjects:
78.66.fd
78.55.-m
85.40.ry
68.55.ln
gallium nitride (gan)
photoluminescence spectra
ion implantation
Online Access:https://doi.org/10.2478/s11534-008-0013-5
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spelling doaj-1752d07b7b7341998440c34179fc1d852021-09-05T14:01:35ZengDe GruyterOpen Physics2391-54712008-06-016228328810.2478/s11534-008-0013-5Effects of ion implantation on yellow luminescence in unintentional doped n-type GaNZhang Limin0Zhang Xiaodong1You Wei2Yang Zhen3Wang WenXiu4Ge Qing5Liu Zhengmin6School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, Chinahttps://doi.org/10.2478/s11534-008-0013-578.66.fd78.55.-m85.40.ry68.55.lngallium nitride (gan)photoluminescence spectraion implantation
collection DOAJ
language English
format Article
sources DOAJ
author Zhang Limin
Zhang Xiaodong
You Wei
Yang Zhen
Wang WenXiu
Ge Qing
Liu Zhengmin
spellingShingle Zhang Limin
Zhang Xiaodong
You Wei
Yang Zhen
Wang WenXiu
Ge Qing
Liu Zhengmin
Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
Open Physics
78.66.fd
78.55.-m
85.40.ry
68.55.ln
gallium nitride (gan)
photoluminescence spectra
ion implantation
author_facet Zhang Limin
Zhang Xiaodong
You Wei
Yang Zhen
Wang WenXiu
Ge Qing
Liu Zhengmin
author_sort Zhang Limin
title Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
title_short Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
title_full Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
title_fullStr Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
title_full_unstemmed Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
title_sort effects of ion implantation on yellow luminescence in unintentional doped n-type gan
publisher De Gruyter
series Open Physics
issn 2391-5471
publishDate 2008-06-01
topic 78.66.fd
78.55.-m
85.40.ry
68.55.ln
gallium nitride (gan)
photoluminescence spectra
ion implantation
url https://doi.org/10.2478/s11534-008-0013-5
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AT zhangxiaodong effectsofionimplantationonyellowluminescenceinunintentionaldopedntypegan
AT youwei effectsofionimplantationonyellowluminescenceinunintentionaldopedntypegan
AT yangzhen effectsofionimplantationonyellowluminescenceinunintentionaldopedntypegan
AT wangwenxiu effectsofionimplantationonyellowluminescenceinunintentionaldopedntypegan
AT geqing effectsofionimplantationonyellowluminescenceinunintentionaldopedntypegan
AT liuzhengmin effectsofionimplantationonyellowluminescenceinunintentionaldopedntypegan
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