Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Bibliographic Details
Main Authors: Zhang Limin, Zhang Xiaodong, You Wei, Yang Zhen, Wang WenXiu, Ge Qing, Liu Zhengmin
Format: Article
Language:English
Published: De Gruyter 2008-06-01
Series:Open Physics
Subjects:
78.66.fd
78.55.-m
85.40.ry
68.55.ln
gallium nitride (gan)
photoluminescence spectra
ion implantation
Online Access:https://doi.org/10.2478/s11534-008-0013-5

Internet

https://doi.org/10.2478/s11534-008-0013-5

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