Analysis of Biaxially Tensile Strained Ge/SiGe Multiple Quantum Wells for Electro-Absorption Modulators With Low Polarization Sensitivities

Analysis of Biaxially Tensile Strained Ge/SiGe Multiple Quantum Wells for Electro-Absorption Modulators With Low Polarization Sensitivities

We analyze theoretically biaxially tensile strained Ge/Si0.18Ge0.82 multiple quantum wells (MQWs) for electro-absorption modulators with low polarization sensitivities. The difference between TE and TM polarized momentum matrix elements and absorption spectra are discussed. Our calculation indicates...

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Bibliographic Details
Main Authors: Jianfeng Gao, Junqiang Sun, Jialin Jiang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Multiple quantum wells
integrated optics devices
modulators
electro-optical devices.
Online Access:https://ieeexplore.ieee.org/document/8392681/

Internet

https://ieeexplore.ieee.org/document/8392681/

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