High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs
The process technology for the fabrication of 4H-SiC trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) has been developed. The optimized TIVJFETs have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process comple...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://doi.org/10.1051/e3sconf/20171612001 |