Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves....
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-08-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/8/780 |