InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters...

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Bibliographic Details
Main Authors: Carlos Navarro, Santiago Navarro, Carlos Marquez, Luca Donetti, Carlos Sampedro, Siegfried Karg, H. Riel, Francisco Gamiz
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
1T-DRAM
III-V
capacitor-less
DRAM
fully depleted
InGaAs
Online Access:https://ieeexplore.ieee.org/document/8418681/

Internet

https://ieeexplore.ieee.org/document/8418681/

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