Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors
Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4913372 |