Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology
In this paper, a novel method to achieve all-GaN integrated MIS-HEMTs in a Si-CMOS platform by self-terminated and self-alignment process is reported. Furthermore, a process of repairing interface defects by supercritical technology is proposed to suppress the threshold voltage shift of all GaN inte...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/5/572 |